SPUTTERING TARGET AND METHOD FOR MANUFACTURING Ti-Al-N FILM AND ELECTRONIC COMPONENT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To increase a manufacturing yield of a Ti-Al alloy target for forming a film such as a Ti-Al-N film used for FeRAM (Ferroelectrics Random Access Memory) or DRAM, besides reducing an amount of the impurities, and to enhance the film quality. SOLUTION: The sputtering target is made from a Ti-Al alloy containing Al in a range of 5-50 atom%. The Ti-Al alloy target comprises Cu content of 10 ppm or less, and Ag content of 1 ppm or less. COPYRIGHT: (C)2011,JPO&INPIT