| 摘要 |
A nonvolatile memory includes a memory cell array comprising an object block which includes a first data bit region capable of storing input data and a first flag bit region capable of storing first flag information, a redundant block which includes a second data bit region capable of storing input data and a second flag bit region capable of storing second flag information, and a special block including a special bit region capable of storing an object block address of the object block. The nonvolatile memory includes an object block retention part which retains the object block address. The nonvolatile memory includes an object block flag storage part which stores the first flag information therein. The nonvolatile memory includes a redundant block flag storage part which stores the second flag information. The nonvolatile memory includes a coincidence detection circuit which detects whether a block address which is input coincides with the object block address retained in the object block retention part. The nonvolatile memory includes a block changeover circuit which controls selection of one of the object block and the redundant block on the basis of the first and second flag information when the coincidence detection circuit has detected that the input block address coincides with the object block address.
|
