发明名称 METHOD AND APPARATUS FOR REMOTE PLASMA SOURCE ASSISTED SILICON-CONTAINING FILM DEPOSITION
摘要 <p>An apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells are provided. In one embodiment, a method and apparatus is provided for generating and introducing hydrogen radicals directly into a processing region of a processing chamber for reaction with a silicon-containing precursor for film deposition on a substrate. In one embodiment, the hydrogen radicals are generated by a remote plasma source and directly introduced into the processing region via a line of sight path to minimize the loss of energy by the hydrogen radicals prior to reaching the processing region.</p>
申请公布号 WO2011113177(A1) 申请公布日期 2011.09.22
申请号 WO2010CN00325 申请日期 2010.03.17
申请人 APPLIED MATERIALS, INC.;LAKSHMANAN, ANNAMALAI;FANG, JUN;TANG, JIANSHE;HO, DUSTIN W.;SCHMITT, FRANCIMAR;TSO, ALAN;CHO, TOM;SHIEH, BRIAN SY-YUAN;PONNEKANTI, HARI K.;EBERSPACHER, CHRIS;YUAN, ZHENG 发明人 LAKSHMANAN, ANNAMALAI;FANG, JUN;TANG, JIANSHE;HO, DUSTIN W.;SCHMITT, FRANCIMAR;TSO, ALAN;CHO, TOM;SHIEH, BRIAN SY-YUAN;PONNEKANTI, HARI K.;EBERSPACHER, CHRIS;YUAN, ZHENG
分类号 C23C16/44;H01L21/205 主分类号 C23C16/44
代理机构 代理人
主权项
地址