发明名称 |
ION IMPLANTATION APPARATUS, ION IMPLANTATION METHOD, AND SEMICONDUCTOR DEVICE |
摘要 |
<p>In the plasma-based ion implantation for accelerating positive ions of a plasma and implanting the positive ions into a substrate to be processed on a holding stage in a processing chamber where the plasma has been excited, ion implantation is achieved in the following manner: an RF power having a frequency of 4 MHz or greater is applied to the holding stage to cause a self-bias voltage to generate on the surface of the substrate. The RF power is applied a plurality of times in the form of pulses.</p> |
申请公布号 |
KR20110104509(A) |
申请公布日期 |
2011.09.22 |
申请号 |
KR20117015027 |
申请日期 |
2009.12.10 |
申请人 |
NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY |
发明人 |
OHMI TADAHIRO;GOTO TETSUYA |
分类号 |
H01J37/317;H01L21/265 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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