| 摘要 |
The present disclosure provides a semiconductor device which includes a semiconductor substrate, a first gate structure disposed over the substrate, the first gate structure including a first gate electrode of a first conductivity type, a second gate structure disposed over the substrate and proximate the first gate structure, the second gate structure including a second gate electrode of a second conductivity type different from the first conductivity type, a first doped region of the first conductivity type disposed in the substrate, the first doped region including a first lightly doped region aligned with a side of the first gate structure, and a second doped region of the second conductivity type disposed in the substrate, the second doped region including a second lightly doped region aligned with a side of the second gate structure.
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