发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND REACTION APPARATUS |
摘要 |
There is provided a method of producing a semiconductor wafer by thermally processing a base water having a portion to be thermally processed that is to be thermally processed. The method comprises a step of providing, on the base wafer, a portion to be heated that generates heat through absorption of an electromagnetic wave and selectively heats the portion to be thermally processed, a step of applying an electromagnetic wave to the base wafer, and a step of lowering the lattice defect density of the portion to he thermally processed, by means of the heat generated by the portion to be heated through the absorption of the electromagnetic wave.
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申请公布号 |
US2011227042(A1) |
申请公布日期 |
2011.09.22 |
申请号 |
US200913131523 |
申请日期 |
2009.11.26 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
TAKADA TOMOYUKI;HATA MASAHIKO;YAMADA HISASHI |
分类号 |
H01L29/165;G05D23/00;H01L21/268 |
主分类号 |
H01L29/165 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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