| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing device increasing plasma excitation efficiency of a processing gas passing between electrodes to increase a film-deposition speed in the substrate processing device having at least a pair of electrodes. SOLUTION: The substrate processing device is configured as follows. That is, it includes a processing chamber 203 laminating and containing a plurality of substrates to process the plurality of substrates, a processing gas supply part supplying the processing gas into the processing chamber, and at least the pair of electrodes 269, 270 disposed in the processing chamber and generating a plasma for exciting the processing gas supplied from the processing gas supply part by application of a power. The pair of electrodes are respectively disposed at different distances from the center position of the substrate. COPYRIGHT: (C)2011,JPO&INPIT
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