| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is driven at a low voltage and excellent in cleavage, and a method of manufacturing the laser device. SOLUTION: The semiconductor laser device includes a GaN substrate; a semiconductor layer formed on a top surface of the GaN substrate; a ridge formed at an upper portion in the semiconductor layer; a recess formed at the bottom surface of the GaN substrate. The recess has a depth smaller than the thickness of the GaN substrate. The device also has a notch deeper than the recess, formed on a side surface, crossing an extension direction of the ridge on a side of the bottom surface of the GaN substrate, and separated from the recess across the GaN substrate. Furthermore, the device has a first electrode formed on the top surface of the ridge and a second electrode formed on the bottom surface of the recess. The total thickness of the GaN substrate and the semiconductor layer is 100 μm or larger, and a distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or longer and 50 μm or shorter. COPYRIGHT: (C)2011,JPO&INPIT
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