发明名称 |
Memory Cell That Includes Multiple Non-Volatile Memories |
摘要 |
A system and method to read and write data at a memory cell that includes multiple non-volatile memories is disclosed. In a particular embodiment, a memory device is disclosed that includes a plurality of memory cells, where at least one of the memory cells comprises a first non-volatile memory including a first resistive memory element and a second multi-port non-volatile memory including a second resistive memory element.
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申请公布号 |
US2011228595(A1) |
申请公布日期 |
2011.09.22 |
申请号 |
US20100728506 |
申请日期 |
2010.03.22 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
RAO HARI M.;KIM JUNG PILL;HAGHIGHI SIAMACK |
分类号 |
G11C11/00;G06F17/50;G11C8/16 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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