发明名称 Memory Cell That Includes Multiple Non-Volatile Memories
摘要 A system and method to read and write data at a memory cell that includes multiple non-volatile memories is disclosed. In a particular embodiment, a memory device is disclosed that includes a plurality of memory cells, where at least one of the memory cells comprises a first non-volatile memory including a first resistive memory element and a second multi-port non-volatile memory including a second resistive memory element.
申请公布号 US2011228595(A1) 申请公布日期 2011.09.22
申请号 US20100728506 申请日期 2010.03.22
申请人 QUALCOMM INCORPORATED 发明人 RAO HARI M.;KIM JUNG PILL;HAGHIGHI SIAMACK
分类号 G11C11/00;G06F17/50;G11C8/16 主分类号 G11C11/00
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