| 摘要 |
<p>A light-emitting diode includes a transparent substrate and a compound semiconductor layer that includes a light-emitting unit and is bonded to the transparent substrate. The light-emitting unit includes a light-emitting layer represented by a composition formula (AlXGa1-X)YIn1-YP (0≰X≰1, 0<Y≰1). A first electrode and a second electrode having a polarity different from that of the first electrode are provided on a main light-emitting surface of the light-emitting diode. The second electrode is formed on the compound semiconductor layer so as to be opposite to the first electrode with a light-emitting layer interposed therebetween. The side surface of the transparent substrate includes a first side surface that is close to the light-emitting layer and is substantially vertical to a light-emitting surface of the light-emitting layer and a second side surface that is distanced away from the light-emitting layer and is inclined with respect to the light-emitting surface. The light-emitting diode further includes a third electrode that is provided on the rear surface of the transparent substrate. In this way, it is possible to provide a light-emitting diode with high light emission efficiency, high productivity in a mounting process, and high brightness.</p> |
