发明名称 |
Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
摘要 |
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region. |
申请公布号 |
EP1770788(A3) |
申请公布日期 |
2011.09.21 |
申请号 |
EP20060019112 |
申请日期 |
2006.09.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
AKIMOTO, KENGO;HONDA, TATSUYA;SONE, NORIHITO |
分类号 |
H01L29/786;G02F1/1368;H01L21/20;H01L21/336;H01L21/77;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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