发明名称 |
SUB-WORD-LINE DRIVING CIRCUIT, SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME, AND METHOD OF CONTROLLING THE SAME |
摘要 |
Provided is a semiconductor memory device including a sub-word-line driving circuit capable of reducing an amount of leakage current due to coupling. The semiconductor memory device includes a word-line enable signal generating circuit and a sub-word-line driving circuit. The sub-word-line driving circuit provides a pull-down current path between a selected word line and ground for a pulse type period of time in a precharge mode following an active mode for the selected word line, generates a word line driving signal on the basis of a main word line driving signal, a first sub-word-line control signal, and a second sub-word-line control signal, and provides the word line driving signal to a memory cell array. The semiconductor memory device may reduce an amount of leakage current flowing to a ground through the sub-word-line driving circuit.
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申请公布号 |
US2011228624(A1) |
申请公布日期 |
2011.09.22 |
申请号 |
US201113019858 |
申请日期 |
2011.02.02 |
申请人 |
KIM CHEOL;PARK SANG-KYUN;LEE JUNG-BAE;LEE JUN-PHYO |
发明人 |
KIM CHEOL;PARK SANG-KYUN;LEE JUNG-BAE;LEE JUN-PHYO |
分类号 |
G11C8/08 |
主分类号 |
G11C8/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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