Vertical junction field effect transistors and methods of producing the same

摘要

A vertical junction field effect transistor comprising: a drain semiconductor portion; a drift semiconductor portion placed on a principal surface of the drain semiconductor portion and having first, second, third, and fourth regions extending in a direction intersecting with the principal surface; a buried semiconductor portion having a conductivity type opposite to a conductivity type of the drift semiconductor portion and placed on the first, second, and fourth regions of the drift semiconductor portion; a channel semiconductor portion placed along the buried semiconductor portion on the first and second regions, having a conductivity type different from the conductivity type of the buried semiconductor portion, and electrically connected to the third region of the drift semiconductor portion; a source semiconductor portion placed on the channel semiconductor portion and the first region of the drift semiconductor portion; a first gate semiconductor portion having the same conductivity type as the buried semiconductor portion, electrically connected to the buried semiconductor portion, and placed above the fourth region of the drift semiconductor portion; a first gate electrode electrically connected to the first gate semiconductor portion above the fourth region of the drift semiconductor portion; and a source electrode electrically connected to the source semiconductor portion above the first region of the drift semiconductor portion, electrically isolated from the first gate electrode above the first gate electrode, and placed above the first, second, third, and fourth regions of the drift semiconductor portion.