Growth of III-nitride light-emitting devices on textured substrates

摘要

A III-nitride light emitting diode (LED) is grown on a textured substrate (40), in order to reduce the amount of total internal reflection at the interface between the substrate and the III-nitride layers. In some embodiments, the LED includes a first growth region (41) free of voids, and a second growth region (47) that improves the material quality such that high quality layers (42-44) can be grown over the first and second regions.