| 发明名称 |
GaN Crystal Substrate with Distinguishable Front and Rear Surfaces |
| 摘要 |
<p>A GaN crystal substrate, comprising: a matrix crystal region; and a differently oriented crystal region including a crystal that is different in at least one crystal axis from a crystal of said matrix crystal region, wherein said differently oriented crystal region is formed to have a shape indicative of an arbitrarily specified crystal orientation.</p> |
| 申请公布号 |
EP2366816(A2) |
申请公布日期 |
2011.09.21 |
| 申请号 |
EP20110166416 |
申请日期 |
2007.03.20 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJITA, SHUNSUKE;KASAI, HITOSHI |
| 分类号 |
C30B29/40;C30B29/38;C30B33/00;H01L21/02;H01L21/205;H01L21/302;H01L33/00 |
主分类号 |
C30B29/40 |
| 代理机构 |
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