Silicon interposer producing method, silicon interposer and seminconductor device package and semiconductor device incorporating silicon interposer

摘要

A silicon interposer producing method comprising the steps of forming through holes 12 in a silicon wafer 11, forming an oxide coating 13 on the silicon wafer 11, providing a power feeding layer 14 for plating on one of the surfaces of the through holes 12, supplying a low thermal expansion filler 15 having a thermal expansion coefficient lower than the thermal expansion coefficient of the conductive material 16 of through-hole electrodes 17 to the through holes 12, filling the conductive material 16 into the through holes 12 by plating to form the through-hole electrodes 17, and removing the power feeding layer 14 for plating.