| 摘要 |
<p>An optical semiconductor, includes a semiconductor substrate (41) having a (100) principal surface, a waveguide mesa stripe (M1) formed on a first region (L1) of the semiconductor substrate, the waveguide mesa stripe guiding a light therethrough; a plurality of dummy mesa patterns (M2,M3) formed on the semiconductor substrate (41) in a second region (L2) at a forward side of the first region, and a semi-insulating buried semiconductor layer (50) formed on the semiconductor substrate (41) so as to cover the first and second regions (L1,L2) continuously, the semi-insulating buried semiconductor layer (50) filling a right side and a left side of the waveguide mesa stripe in the first region (L1) and a gap between the plurality of dummy mesa patterns (M4,M3) in the second region (L2).
This structure decreases the sensitivity against optical feedback from externally reflected light in the case of the device being a laser diode.</p> |
