发明名称 Circuit for reducing duty distortion in a semiconductor memory device
摘要 A circuit for outputting an amplified clock signal is disclosed. The circuit includes a first input terminal for inputting a first clock signal, a second input terminal for inputting a second clock signal, a first amplifier circuit for amplifying the first clock signal and outputting a first amplified clock signal at a first output terminal, and a second amplifier circuit for amplifying the second clock signal and outputting a second amplified clock signal at a second output terminal. The circuit additionally includes a level maintenance circuit connected to the first output terminal and the second output terminal. The circuit further includes an output circuit connected to the first output terminal and the second output terminal and configured to output a further amplified clock signal based on the first amplified clock signal and the second amplified clock signal. The level maintenance circuit is configured to reduce duty distortion in the further amplified clock signal.
申请公布号 US8022742(B2) 申请公布日期 2011.09.20
申请号 US20100651725 申请日期 2010.01.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM CHAN-KYUNG
分类号 H03K7/08 主分类号 H03K7/08
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