Non-volatile memory device having monitoring memory cell and related method of driving using variable read voltage

摘要

A non-volatile memory device and related method of driving data are disclosed. The non-volatile memory device includes an array of multi level cells and a monitoring memory cell. The method of driving including performing a preliminary read operation with respect to a monitoring memory cell using a first read voltage, determining whether data initially stored in the monitoring memory cell is identical with data read from the monitoring memory cell during the preliminary read operation, and setting a main read voltage to a level different from the level of the first read voltage when the data initially stored in the monitoring memory cell is not identical with the data read from the monitoring memory cell in relation to the first read voltage.