发明名称 |
Backside phase grating mask and method for manufacturing the same |
摘要 |
A mask includes mask patterns formed over a frontside of a substrate and a phase grating formed over a backside of the substrate. The mask patterns correspond to a layout of diagonal patterns extending in a direction rotated toward a predetermined direction from an axis of a rectangular coordinate system. The phase grating extends in a direction parallel to the extending direction of the mask patterns. The phase grating includes first and second phase regions alternately arranged over the backside of the substrate with a phase difference of 180° therebetween. The first and second phase regions induce a phase interference that blocks a zero-order light of an exposure light incident to the substrate and allows a primary light to be incident to the mask patterns.
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申请公布号 |
US8021805(B2) |
申请公布日期 |
2011.09.20 |
申请号 |
US20090493075 |
申请日期 |
2009.06.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
OH SUNG HYUN;NAM BYUNG HO |
分类号 |
G03C5/00;G03F1/34;G03F1/68 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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