发明名称 Backside phase grating mask and method for manufacturing the same
摘要 A mask includes mask patterns formed over a frontside of a substrate and a phase grating formed over a backside of the substrate. The mask patterns correspond to a layout of diagonal patterns extending in a direction rotated toward a predetermined direction from an axis of a rectangular coordinate system. The phase grating extends in a direction parallel to the extending direction of the mask patterns. The phase grating includes first and second phase regions alternately arranged over the backside of the substrate with a phase difference of 180° therebetween. The first and second phase regions induce a phase interference that blocks a zero-order light of an exposure light incident to the substrate and allows a primary light to be incident to the mask patterns.
申请公布号 US8021805(B2) 申请公布日期 2011.09.20
申请号 US20090493075 申请日期 2009.06.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 OH SUNG HYUN;NAM BYUNG HO
分类号 G03C5/00;G03F1/34;G03F1/68 主分类号 G03C5/00
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