发明名称 Positive resist compositions and patterning process
摘要 A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. Herein R1 is H or methyl, m is 1 or 2, and n is 1 or 2.
申请公布号 US8021822(B2) 申请公布日期 2011.09.20
申请号 US20090355072 申请日期 2009.01.16
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 OHSAWA YOUICHI;KINSHO TAKESHI;WATANABE TAKERU
分类号 G03F7/004;G03F7/30 主分类号 G03F7/004
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