发明名称 Method of annealing a dielectric layer
摘要 A method includes forming a first dielectric layer over a substrate; forming nanoclusters over the first dielectric layer; forming a second dielectric layer over the nanoclusters; annealing the second dielectric layer using nitrous oxide; and after the annealing the second dielectric layer, forming a gate electrode over the second dielectric layer.
申请公布号 US8021970(B2) 申请公布日期 2011.09.20
申请号 US20090408444 申请日期 2009.03.20
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 SHEN JINMIAO J.;HONG CHEONG M.;KANG SUNG-TAEG;ROSSOW MARC A
分类号 H01L21/4763 主分类号 H01L21/4763
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