发明名称 |
Method of annealing a dielectric layer |
摘要 |
A method includes forming a first dielectric layer over a substrate; forming nanoclusters over the first dielectric layer; forming a second dielectric layer over the nanoclusters; annealing the second dielectric layer using nitrous oxide; and after the annealing the second dielectric layer, forming a gate electrode over the second dielectric layer.
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申请公布号 |
US8021970(B2) |
申请公布日期 |
2011.09.20 |
申请号 |
US20090408444 |
申请日期 |
2009.03.20 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
SHEN JINMIAO J.;HONG CHEONG M.;KANG SUNG-TAEG;ROSSOW MARC A |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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