Semiconductor memory device including stacked gate having charge accumulation layer and control gate and method of writing data to semiconductor memory device

摘要

A semiconductor memory device includes memory cells, word lines, a driver circuit, and a control circuit. The driver circuit repeats a programming operation of selecting any one of the word lines, of applying a first voltage to selected one of the word lines, and of applying a second voltage to unselected one of the word lines, to write data to selected one of the memory cells connected to the selected one of the word lines. The control circuit, while the driver circuit is repeating the programming operation, steps up the first voltage and keeps the second voltage constant until the first voltage reaches a first threshold. The control circuit steps up the second voltage after the first voltage has reached the first threshold.