发明名称 Memory device and semiconductor device
摘要 It is an object of the present invention to provide an involatile memory device, in which additional writing of data is possible other than in manufacturing steps and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is also an object of the present invention to provide an inexpensive involatile memory device and a semiconductor device having high reliability. According to the present invention, a memory device includes a first conductive layer, a second conductive layer, and an insulating layer interposed between the first conductive layer and the second conductive layer, where the first conductive layer has a convex portion.
申请公布号 US8023302(B2) 申请公布日期 2011.09.20
申请号 US20060578057 申请日期 2006.01.26
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YUKAWA MIKIO;ABE HIROKO;YAMAZAKI SHUNPEI
分类号 G11C5/02 主分类号 G11C5/02
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