发明名称 |
SILICON FOR N-TYPE SOLAR CELL AND PROCESS FOR PRODUCING PHOSPHORUS-DOPED SILICON |
摘要 |
It is an object of the present invention to provide aluminum-containing silicon for n-type solar cells. It further provides a method of producing phosphorous-doped silicon refined form aluminum-containing silicone from an economical point of view. It provides silicon for n-type solar cells containing aluminum at a mass concentration of from 0.001 to 1.0 ppm and phosphorous at a mass concentration of from 0.0011 to 1.1 ppm, and having a mass concentration ratio of phosphorous to aluminum of 1.1 or greater. It further provides a method of producing phosphorous-doped silicon, including: preparing a melted mixture containing aluminum, phosphorous, and silicon, by heating and melting aluminum-containing silicon to obtain a melted product and adding phosphorous to the obtained melted product, or by adding phosphorous to aluminum-containing silicon to obtain a mixture and heating and melting the obtained mixture; and then solidifying the melted mixture in a mold under a temperature gradient in one direction. |
申请公布号 |
KR20110102301(A) |
申请公布日期 |
2011.09.16 |
申请号 |
KR20117010074 |
申请日期 |
2009.11.30 |
申请人 |
SUMITOMO CHEMICAL CO., LTD.;TOKYO UNIVERSITY OF AGRICULTURE & TECHNOLOGY |
发明人 |
MEGUMI TOMOHIRO;TABUCHI HIROSHI;KAMISAKO KOICHI;DHAMRIN MARWAN |
分类号 |
C01B33/033;C01B33/037;C30B29/06;H01L31/042 |
主分类号 |
C01B33/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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