| 摘要 |
A metal-bonding ceramic substrate is provided. The ceramic substrate has a circuit pattern formed by bonding a metal layer on a surface thereof. A plurality of metal layers are disposed in rows and columns to form the circuit pattern. An additional metal layer is formed along an edge of at least one surface of the ceramic substrate to be disposed at the edge of the metal layer. In addition, the distance between the metal layers may be the same as that between the metal layer and the additional metal layer. Accordingly, dimension precision may be improved by reducing a variation of a circuit pattern in an etching process for forming a circuit, a bonding property of a semiconductor chip may be enhanced by reducing a temperature variation in thermal treatment of a lead ash layer for mounding the semiconductor chip, and bending of a substrate occurring due to a difference in the coefficient of thermal expansion between a metal and a ceramic may be reduced or artificially controlled. |
