发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND REACTION APPARATUS |
摘要 |
<p>There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that has a single-crystal layer and is to be subjected to thermal processing and a portion to be protected that is to be protected from heal, to be added during the thermal processing. The method comprises a step of forming, above the portion to be protected, a protective layer for protecting the portion to be protected from an electromagnetic wave to be applied to the base wafer, and a step of annealing the portion to be thermally processed, by applying the electromagnetic wave to the entire base wafer.</p> |
申请公布号 |
KR20110102293(A) |
申请公布日期 |
2011.09.16 |
申请号 |
KR20117005429 |
申请日期 |
2009.11.26 |
申请人 |
SUMITOMO CHEMICAL CO., LTD. |
发明人 |
HATA MASAHIKO;TAKADA TOMOYUKI;YAMADA HISASHI |
分类号 |
H01L21/26;H01L21/324;H01L21/336;H01L29/78 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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