发明名称 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND REACTION APPARATUS
摘要 <p>There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that has a single-crystal layer and is to be subjected to thermal processing and a portion to be protected that is to be protected from heal, to be added during the thermal processing. The method comprises a step of forming, above the portion to be protected, a protective layer for protecting the portion to be protected from an electromagnetic wave to be applied to the base wafer, and a step of annealing the portion to be thermally processed, by applying the electromagnetic wave to the entire base wafer.</p>
申请公布号 KR20110102293(A) 申请公布日期 2011.09.16
申请号 KR20117005429 申请日期 2009.11.26
申请人 SUMITOMO CHEMICAL CO., LTD. 发明人 HATA MASAHIKO;TAKADA TOMOYUKI;YAMADA HISASHI
分类号 H01L21/26;H01L21/324;H01L21/336;H01L29/78 主分类号 H01L21/26
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