| 摘要 |
PROBLEM TO BE SOLVED: To reduce chip area by omitting an enable-fuse. SOLUTION: The method of repairing a semiconductor memory device includes: a comparing step for comparing an externally input address with an addresses held at each of a plurality of repair sets; a latch step in which two or more repair sets latch an inactive signal when addresses match simultaneously in the two or more repair sets, and one repair set latches an active signal when addresses match in only one repair set, as a result of the comparison. An address held by the repair set having latched the inactive signal is not used as a defective address during normal operation. An address held in a repair set having latched the active signal is used as a defective address during normal operation. COPYRIGHT: (C)2011,JPO&INPIT
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