| 摘要 |
In one embodiment, a semiconductor substrate has first and second principal surfaces opposite to each other, and has a penetration hole extending from the first principal surface to the second principal surface. An imaging element portion is formed on the first principal surface side. A first insulating film is formed on the first principal surface side. An interconnection electrode is formed in the first insulating film and connected to the imaging element portion. A second insulating film is provided to cover a surface of the penetration hole and the second principal surface except at least a portion facing the interconnection electrode. The second insulating film contains particles and is configured to intercept an infrared ray and to transmit a visible light. A conductor film contacts the interconnection electrode and is formed on the second insulating film.
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