| 摘要 |
<p>Provided is a sputtering device which can efficiently generate high density plasma on the surface of a sputtering target and form a film at high speed. Also provided are a plasma processing device and a large-area sputtering device which has a simple structure, allows for the simple attachment and detachment of the sputtering target, and is readily maintained. The sputtering device has an inductive coupling-type antenna conductor plate mounted in a section of a vacuum vessel, wherein a sputtering target plate is attached at the plasma forming space side of the inductive coupling-type antenna conductor, one end of the antenna conductor is connected to a high-frequency power supply, and the other opposing end is grounded by way of a capacitor. In addition, a plurality of antenna conductors are provided together to construct a large-area sputtering device.</p> |
