| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide novel technique for obtaining an n-type ZnO-based semiconductor layer. <P>SOLUTION: A method of manufacturing a ZnO-based semiconductor element includes the steps of: growing a first undoped ZnO-based semiconductor layer above a substrate at ≤400°C; annealing the first undoped ZnO-based semiconductor layer at ≥800°C to obtain a first n-type ZnO-based semiconductor layer having an n-type carrier concentration of 1×10<SP>16</SP>cm<SP>-3</SP>; growing a ZnO-based semiconductor active layer above the first n-type ZnO-based semiconductor layer; and growing a p-type ZnO-based semiconductor layer above the ZnO-based semiconductor active layer, wherein a laminate of the first n-type ZnO-based semiconductor layer, ZnO-based semiconductor active layer, and p-type ZnO-based semiconductor layer form a pn junction structure. <P>COPYRIGHT: (C)2011,JPO&INPIT |
