发明名称 NAND ARRAY SOURCE/DRAIN DOPING SCHEME
摘要 An electronic device includes a substrate having isolation features defining active regions coextending over a surface of the substrate. The device also includes coextending line patterns crossing over the active regions, including string and ground selection lines and word lines between the string and ground selection lines. The device further includes first implant regions of a first conductivity type in the active regions between the word lines and having a first carrier concentration. The device further includes second implant regions of the first conductivity type in the active regions between edge ones of the word lines and an adjacent one of the string selection line and the ground selection line. In the device, the second implant region includes a low doping portion abutting the edge word lines and a high doping portion spaced from the edge word line by the low doping portion and having a second carrier concentration greater than the first carrier concentration.
申请公布号 US2011221006(A1) 申请公布日期 2011.09.15
申请号 US20100722014 申请日期 2010.03.11
申请人 SPANSION LLC 发明人 CHEN CHUN;FANG SHENQING
分类号 H01L27/088;H01L21/8239 主分类号 H01L27/088
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