发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a charge storage structure and a gate. The charge storage structure is formed on a substrate. The gate is formed on the charge storage structure. The gate includes a lower portion formed of silicon and an upper portion formed of metal silicide. The upper portion of the gate has a width greater than that of the lower portion of the gate. |
申请公布号 |
US2011220985(A1) |
申请公布日期 |
2011.09.15 |
申请号 |
US201113044766 |
申请日期 |
2011.03.10 |
申请人 |
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发明人 |
SON JUNG-MIN;LEE WOON-KYUNG |
分类号 |
H01L27/06;H01L21/28;H01L29/423;H01L29/788 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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