SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed are: a silicon carbide semiconductor device having excellent electrical properties including channel mobility; and a process for producing the silicon carbide semiconductor device. The process for producing the silicon carbide semiconductor device comprises: an epitaxial layer formation step of preparing a semiconductor film comprising silicon carbide; a gate insulating film formation step of forming an oxide film on the surface of the semiconductor film; a nitrogen annealing step of heat-treating the semiconductor film having the oxide film formed thereon in a nitrogen-containing atmosphere; and a post heat treatment step of carrying out a post heat treatment of the semiconductor film having the oxide film formed thereon, which has been subjected to the nitrogen annealing step, in an atmosphere containing an inert gas. The heat treatment temperature (T2) to be employed in the post heat treatment step is higher than the heat treatment temperature (T1) employed in the nitrogen annealing step and lower than the melting point of the oxide film.