| 摘要 |
PROBLEM TO BE SOLVED: To prevent occurrence of corrosion etc., to the inside of a driving circuit of a semiconductor device which includes a TFT having superior characteristics such as a small leakage current, a high field effect mobility, etc., and has the driving circuit built in to decrease the number of components. SOLUTION: The semiconductor device includes a TFT array substrate 100 having the driving circuit built in, and the TFT array substrate includes: a gate electrode 2; a gate insulating film 3; a semiconductor layer 4 where a channel region 4c is formed including a crystalline semiconductor portion; a channel protecting film 5 protecting the channel region 4c; a source electrode 6 and a drain electrode 7 that are formed to connect with the semiconductor layer 4; and a wiring converting unit 12 that electrically connects a wiring layer 2a formed at the same layer as the gate electrode 2 and a wiring layer 6a formed at the same layer as the source electrode 6 through a contact hole 13 by bringing them into direct contact with each other in the driving circuit. COPYRIGHT: (C)2011,JPO&INPIT |
