THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin-film transistor which reduces contact resistance between source/drain electrodes and a semiconductor film to improve mobility characteristics, and to provide a high-performance display device using the thin-film transistor. SOLUTION: The thin-film transistor includes a gate electrode formed on a substrate, a gate insulating film formed on the substrate to cover the gate electrode, a semiconductor film formed on the gate insulating film, and a pair of electrodes in each of which at least a part is formed on the semiconductor film and which function as a source electrode and a drain electrode, respectively. The semiconductor film contains germanium or silicon and germanium. The pair of electrodes is formed of a metal film containing a boron or a group V element. A germano-silicide or metal-germanium compound is formed between each of the pair of electrodes and the semiconductor film. COPYRIGHT: (C)2011,JPO&INPIT