| 摘要 |
PROBLEM TO BE SOLVED: To readily realize a field-effect transistor that uses a nitride semiconductor in which current collapse is suppressed. SOLUTION: The field-effect transistor is formed on a substrate 100, and includes a semiconductor layer lamination 102, having a first nitride semiconductor layer 122 and a second nitride semiconductor layer 123. On the semiconductor layer lamination 102, a source electrode 131 and a drain electrode 132 are formed across an interval. Between the source electrode 131 and the drain electrode 132, a gate electrode 133 is formed to be separated from the source electrode 131 across an interval and from the drain electrode 132 across an interval. A hole injection portion 141 is formed near the drain electrode 132, and has a p-type third nitride semiconductor layer 142 and a hole injection electrode 143 formed on the third nitride semiconductor layer 142. The drain electrode 132 and the hole injection electrode 143 are virtually identical in potential with each other. COPYRIGHT: (C)2011,JPO&INPIT |
