METHOD OF MANUFACTURING IGZO-BASED AMORPHOUS OXIDE SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To manufacture an IGZO-based amorphous oxide semiconductor film by a sputtering method, which has suitable carrier density as an active layer of a TFT and excellent stability against electrical stress and heat. SOLUTION: The semiconductor film made of IGZO-based amorphous oxide is manufactured by performing annealing processing under a condition satisfying an expression (2) after forming a film of an IGZO-based amorphous oxide layer by sputtering under a condition satisfying an expression (1). Here, 1×10-5≤P(Pa)≤5×10-4(1), and 100≤T(°C)≤300 (2), where P represents a back pressure of the sputter film formation, and T represents annealing temperature of the annealing processing. COPYRIGHT: (C)2011,JPO&INPIT