| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor that maintains device characteristics and reduces a gate leakage current, and to provide a method of manufacturing the same. SOLUTION: The field-effect transistor 100 includes a group III-V nitride semiconductor layer structure, a source electrode 105 and a drain electrode 106 formed on the semiconductor layer structure apart from each other, a gate electrode 108 formed between the source electrode 105 and the drain electrode 106, an electrode protective film 107 formed on the source electrode 105 and on the drain electrode 106, and a first passivation film 109 formed on the semiconductor laser structure so as to cover at least parts of upper surfaces of the source electrode 105, drain electrode 106, gate electrode 108, and electrode protective film 107, wherein the first passivation film 109 is chemically active to a predetermined material and the electrode protective film 107 is chemically inactive to the predetermined material. COPYRIGHT: (C)2011,JPO&INPIT
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