| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor whose on current can be stabilized, and to provide a method of manufacturing the thin film transistor. SOLUTION: An EL panel 1 has a structure such that a part of a laminate of a source electrode 6i (5i) and an impurity semiconductor film 6g (5g) of a thin film transistor such as a switch transistor 5 or drive transistor 5 used as a drive element, overlaps one end side of a channel protective film 6d (5d) which is large in film thickness. Consequently, back-gate effect operating on the channel protective film 6d (5d) covering a region to serve as a channel can be suppressed to suppress disorder of the channel, and an on current (Id) of the thin film transistor 6 (5) is made larger than before to be stabilized to a suitable value. COPYRIGHT: (C)2011,JPO&INPIT
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