发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
摘要 A wafer structure (88) includes a device wafer (20) and a cap wafer (60). Semiconductor dies (22) on the device wafer (20) each include a microelectronic device (26) and terminal elements (28, 30). Barriers (36, 52) are positioned in inactive regions (32, 50) of the device wafer (20). The cap wafer (60) is coupled to the device wafer (20) and covers the semiconductor dies (22). Portions (72) of the cap wafer (60) are removed to expose the terminal elements (28, 30). The barriers (36, 52) may be taller than the elements (28, 30) and function to prevent the portions (72) from contacting the terminal elements (28, 30) when the portions (72) are removed. The wafer structure (88) is singulated to form multiple semiconductor devices (89), each device (89) including the microelectronic device (26) covered by a section of the cap wafer (60) and terminal elements (28, 30) exposed from the cap wafer (60).
申请公布号 US2011221042(A1) 申请公布日期 2011.09.15
申请号 US20100722225 申请日期 2010.03.11
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 KARLIN LISA H.;LIU LIANJUN;PAMATAT ALEX P.;WINEBARGER PAUL M.
分类号 H01L23/04;H01L21/50 主分类号 H01L23/04
代理机构 代理人
主权项
地址