| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting device improving the heat dissipation property and an optical apparatus using the same. SOLUTION: A second substrate 31 made of GaAs is provided with: a laser oscillation part 60 made of an AlGaAs based semiconductor layer; and a laser oscillation part 70 made of an AlGaInP based semiconductor layer. An n-type clad layer 71 or an etching stop layer 74 is removed from the peripheral section 90 of the second substrate 31 other than the laser oscillation parts 60, 70. An embedded layer 91 made of a material having a thermal conductivity higher than that of the etching stop layer 74 or the n-type clad layer 71, is provided to the peripheral section 90. Heat generated in a first light emitting element 20 is conducted to a support base 11 via the high thermal conductivity embedded layer 91, thereby improving the heat dissipation property. COPYRIGHT: (C)2011,JPO&INPIT |
