发明名称 Method and Device Utilizing Strained AZO Layer and Interfacial Fermi Level Pinning in Bifacial Thin Film PV Cells
摘要 A method for forming a bifacial thin film photovoltaic cell includes providing a glass substrate having a surface region covered by an intermediate layer and forming a thin film photovoltaic cell on the surface region. Additionally, the thin film photovoltaic cell includes an anode overlying the intermediate layer, an absorber over the anode, and a window layer and cathode over the absorber mediated by a buffer layer. The anode comprises an aluminum doped zinc oxide (AZO) layer forming a first interface with the intermediate layer and a second interface with the absorber. The AZO layer is configured to induce Fermi level pinning at the first interface and a strain field from the first interface to the second interface.
申请公布号 US2011220198(A1) 申请公布日期 2011.09.15
申请号 US201113049190 申请日期 2011.03.16
申请人 STION CORPORATION 发明人 TANDON ASHISH;MIKULEC FRED
分类号 H01L31/0224;H01L31/18 主分类号 H01L31/0224
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