SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Provided are a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a semiconductor substrate including a first active region and a second active region, a gate electrode including a silicide layer formed on the first active region and a resistor pattern formed on the second active region. A distance from a top surface of the semiconductor substrate to a top surface of the resistor pattern is smaller than a distance from a top surface of the semiconductor substrate to a top surface of the gate electrode.