| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode structure including an accurately-formed and miniaturized electrode, a method of manufacturing the same, and a semiconductor device. SOLUTION: A plurality of first grooves 16 extending in a first direction are formed on a first interlayer insulation film 13; a first conductive film 32 is formed to cover two side faces facing each other and a bottom face of each first groove 16; the plurality of first grooves 16 formed with the first conductive films 32 are filled with first insulation films 19; hard mask layers 33 extending in a second direction and having a plurality of openings are formed on upper surfaces of the first interlayer insulation film 13, the first insulation films 19 and the first conductive films 32; electrodes formed of the first conductive films 32 are formed at the first grooves 16 by removing the first insulation films 19 and the first conductive films 32 at parts exposed from the plurality of openings by an anisotropic etching method; a plurality of second grooves 17 intersecting with the first grooves 16 are formed on the first interlayer insulation film 13, the hard mask layer 33 is removed, and thereafter the second grooves 17 are filled with second insulation films 21. COPYRIGHT: (C)2011,JPO&INPIT
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