| 摘要 |
Disclosed is magnetron based metallization processing apparatuses. The apparatus comprises a magnetron which comprises at least one pole piece that is not a permanent magnet at least before the at least one pole piece is assembled in the magnetron assembly. The balance or unbalance ratio of magnetic strength between inner and outer pole pieces may be adjusted by a gap between inner or outer pole pieces and mounting plate. The apparatus may comprise a second magnet assembly that is used to modify the electromagnetic field created by the magnetron assembly for fabricating a semiconductor device. The second magnet assembly comprises electromagnet(s), permanent magnet(s), or ferrous materials. The apparatus may further comprise either DC, pulsed, or RF power supply for charging a sputtering target. The apparatus may comprise a plenum that is used to control the thermal behavior of the sputtering target and is separated from the magnetron assembly.
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