IMPROVED EDRAM ARCHITECTURE

摘要

A process for manufacturing an eDRAM device (300) comprises fabricating semiconductor features (304 a-e) on a semiconductor substrate, the semiconductor substrate including a DRAM area (301) and logic area (302). The process also includes fabricating a first conductive layer (Ml) in the DRAM area and in the logic area, the first conductive layer in communication with a first group of the semiconductor features. After fabricating the first conductive layer, a storage component (312,313) is fabricated in communication with a second group of the semiconductor features within the DRAM area.