发明名称 METHOD FOR DOPING IMPURITIES INTO A SUBSTRATE AND METHOD FOR MANUFACTURING A SOLAR CELL USING THE SAME
摘要 <p>In a method for implanting impurities into a substrate and a method for manufacturing a solar cell using the method, a substrate is dipped into a first solution including a first impurity, and a laser is irradiated to a first region of the substrate dipped into the first solution is irradiated with laser to implant a first dopant generated from the first impurity into the first region. Accordingly, the first dopant generated from the first impurity is implanted into the substrate at room temperature to improve reliability for implanting the first dopant.</p>
申请公布号 KR20110100715(A) 申请公布日期 2011.09.15
申请号 KR20100019698 申请日期 2010.03.05
申请人 SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG SDI CO., LTD. 发明人 KANG, YOON MOOK
分类号 H01L21/265;H01L31/042 主分类号 H01L21/265
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