| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified negative resist composition capable of giving a resist pattern with reduced line edge roughness and small substrate dependency thereof, and a patterning process using the same. <P>SOLUTION: In a chemically amplified negative resist composition comprising (A) a base polymer which is soluble in an aqueous alkaline developer, but turns insoluble therein through acid-catalyzed reaction, and/or a combination of a base polymer with a crosslinker, the base polymer being soluble in an aqueous alkaline developer, but turning insoluble therein through reaction with the crosslinker with the help of an acid catalyst, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, a polymer compound represented by general formula (1) is used as at least a portion of the base polymer. In the formula, R<SP>1</SP>represents a structure derived from a basis skeleton capable of providing the polymerization activity of a polymerizable monomer, represented by any one of formulae (X), wherein the valence bond extending from the oxygen atom in the structure designates a bond to W<SP>1</SP>; R<SP>2</SP>represents fluorine or fluoroalkyl; W<SP>1</SP>represents a divalent organic group; and Q<SP>+</SP>denotes a sulfonium cation or an iodonium cation. According to the invention, the objective chemically amplified negative resist composition is obtained which can make diffusion of an acid more uniform and low, improves line edge roughness and ensures small substrate dependency of a pattern. <P>COPYRIGHT: (C)2011,JPO&INPIT |
