发明名称 DEVICE AND METHOD OF MEASURING PHYSICAL PROPERTY, THIN-FILM SUBSTRATE MANUFACTURING SYSTEM, AND PROGRAM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a physical property measuring device, a method of measuring physical properties, a thin-film substrate manufacturing system, and a program for nondestructively and precisely measuring physical properties of a thin film formed on the surface of a substrate. <P>SOLUTION: The physical property measuring device for measuring physical properties of a thin film H formed on a surface of a substrate K includes: a terahertz wave generation source for generating terahertz waves; a moving means of moving the substrate K and the thin film H so that terahertz waves from the terahertz wave generation source are applied to a non-formation region N where no thin films H are formed on surfaces of a film formation region F in which the thin film H is formed on a surface of the substrate K and on the surface of the substrate K; a detection means of detecting an electric field strength of transmission waves or reflection waves from the film formation region F and the non-formation region N for a plurality of times; and an integration means of integrating the electric field strength of transmission waves or reflection waves detected by the detection means for a plurality of times; and a measurement means of measuring a time change of the electric field strength of the transmission waves or reflection waves integrated by the integration means. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011179971(A) 申请公布日期 2011.09.15
申请号 JP20100044546 申请日期 2010.03.01
申请人 TOKYO ELECTRON LTD;UNIV OF YAMANASHI;INSTITUTE OF PHYSICAL & CHEMICAL RESEARCH 发明人 SHIMIZU MASAHIRO;ARIMA SUSUMU;OKUZAKI SHUSUKE;OTANI TOMOYUKI;YAMASHITA MASATSUGU
分类号 G01N21/35;G01N21/3563;G01N21/3586;G01N21/41;G01N21/55;G01N21/59 主分类号 G01N21/35
代理机构 代理人
主权项
地址